Computation of the onset of point defect aggregation in crystalline silicon using an empirical interatomic potential

Authors: Robert A. Brown, Talid Sinno
Publication Date: March 15, 1995

Citation: T. Sinno and R. A. Brown, Computation of the onset of point defect aggregation in crystalline silicon using an empirical interatomic potential, .in: Defect and Impurity Engineered Semiconductors and Devices, Mat. Res. Soc. Symp. Proc. (1995) 95-100