Authors: Robert A. Brown, Talid Sinno, Tatsuo Mori
Publication Date: April 15, 1999
Citation: T. Mori, T. Sinno, and R. A. Brown, Numerical Simulation of Two-Dimensional Grown-In Defect Dynamics in Czochralski Crystal Growth of Silicon, Proceedings of the Third International Symposium on Defects in Silicon, Electrochem. Soc. Proc. PV99-1 (1999) 425-436.
Abstract: Crystalline silicon grown by the Czochralski (CZ) method contains a variety of grown-in defects. For example, grown-in voids, generated as aggregates of vacancy point defects, have been shown to degrade the gate oxide integrity of microelectronic devices. Minimizing the number and size of these voids is crucial to improving the yield of electronic devices. Numerical simulation of defect dynamics during the growth of the crystal and subsequent wafer processing provides quantitative understanding of the formation of microdefects. Because aggregation of point defects is strongly influenced by the temperature field in the crystal, these dynamics are strongly two-dimensional and, in most processes, time dependent. This paper describes the first, two-dimensional, time-dependent simulation of point defect dynamics and aggregation during the growth of a silicon.