Boron retarded self-interstitial diffusion in Czochralski growth of silicon crystals and its role in oxidation-induced stacking-fault ring dynamics

Authors: Erich Dornberger, Hendi Susanto, Robert A. Brown, Talid Sinno, Wilfried von Ammon
Publication Date: July 17, 1999
Journal: Applied Physics Letters

Citation: T. Sinno, H. Susanto, R. A. BrownBoron Retarded Self-Interstitial Diffusion in Czochralski Growth of Silicon Crystals and its Role in Oxidation-Induced Stacking-Fault Ring Dynamics, Applied Physics Letters, 75 (1999) 1544-1546.

Abstract: The effect of boron doping on the position of the oxidation-induced stacking-fault ring (OSF ring) during Czochralski (CZ) crystal growth is described using a comprehensive model for point defect dynamics including the role of boron. The important interactions between boron atoms and intrinsic point defects are selected on the basis of tight-binding estimates for the energies of formation for boron-point defect structures. Intrinsic point defect properties used are taken from a parameterized model of point defect dynamics for predicting OSF-ring dynamics. Entropies of formation for boron-point defect species are obtained by fitting the predictions of the model to experimental data for OSF-ring dynamics. The model successfully predicts OSF-ring dynamics for a variety of doping and growth conditions. The effect of boron on the OSF ring is caused by the retardation of point defect recombination at temperatures near the melting point caused by dynamic storage of self-interstitials in complexes with boron.