Thermophysical Properties of Intrinsic Point Defects in Crystalline Silicon

Authors: Talid Sinno
Publication Date: May 15, 2002

Citation: T. Sinno, Thermophysical Properties of Intrinsic Point Defects in Crystalline Silicon, Electrochem. Soc. Proc. PV2002-2 (2002) 212-223.


Abstract: The study of intrinsic point defect dynamics during silicon crystal growth and wafer processing has had a long and rich history. Despite an enormous body of work on the subject, quantitatively robust models based on the dynamics of point defects in silicon have yet to be developed. A major limitation is the accuracy of estimates for the thermophysical properties of point defects, namely diffusion coefficients, equilibrium concentrations, and reaction kinetics. An overview is presented of the various theoretical and experimental approaches taken for determining these properties. In particular, the predictions for point defect properties obtained from metal (Zn [1], Pt, and Au [2]) and dopant (Group III and V) diffusion during wafer thermal annealing are compared to those obtained using single crystal ingot growth. Lastly, the predictions of model fitted thermophysical properties are discussed in the context of atomistic simulations. Results from Ab initio, tight-binding, and empirical potential simulations are considered.