Vacancy self-trapping during rapid thermal annealing of silicon wafers

Authors: Talid Sinno, Thomas A. Frewen
Publication Date: November 6, 2006
Journal: Applied Physics Letters

Citation: T. A. Frewen and T. SinnoVacancy Self-Trapping during Rapid Thermal Annealing of Silicon Wafers, Applied Physics Letters 89(2006) 191903-5. Selected to be included in the Virtual Journal of Nanoscale Science and Technology, 14, (2006).


Abstract: The density and spatial distribution of oxide precipitates within a crystalline silicon wafer is of paramount importance for microelectronic device yield. In this letter, the authors show how the formation of previously unconsidered, very small vacancy aggregates can explain macroscopic spatial variations in the oxide precipitate density, which are observed following certain rapid thermal annealing conditions. The formation of these nanometer-sized voids is predicted on the basis of their recent model for vacancy aggregation that accounts for high temperature entropic effects.