Chapter 10. Epitaxial silicon wafers using plasma-enhanced, chemical-vapor-deposition

Authors: Talid Sinno, Warren D. Seider
Publication Date: September 17, 2007
Journal: Chemical Product Design: Towards a Perspective Through Case Studies

Citation: T. Sinno and W. D. Seider, Epitaxial Silicon Wafers using Plasma-Enhanced Chemical Vapor Deposition, in: Chemical Product Design: Towards a Perspective Through Case Studies, eds. K. M. Ng, R. Gani, and K. Dam-Johansen, Elsevier (2006).

Abstract: This case study involves the manufacture of epitaxial silicon wafers, an industrial chemical productused in the production of configured consumer productssuch as integrated circuits. The Stage-Gate Product Development Process[1,2] is applied for interaction with business decision-makers during the design stage. Emphasis is placed on process technology innovation; that is, a novel approach for the design of the plasma-enhanced, chemical-vapor-deposition (PECVD) reactor. For a 30-cm wafer, a new design strategy is suggested that minimizes the deposition time, for a given film thickness uniformity, by adjusting the geometry of the reactor. A moderately sized addition to an existing business is projected that takes polished wafers as a raw material and, using conventional processing techniques, along with a new reactor, produces epitaxial wafers. Profitability measures are computed as a function of wafer prices.